s mhop microelectronics c orp. a stu/d36l01a symbol v ds v gs i dm a i d units parameter 100 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to-251 package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous -pulsed a a www.samhop.com.tw mar,05,2012 1 details are subject to change without notice. t c =25 c g g s s d d g g s s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) s t d s e ri e s to - 2 5 1 ( i - p a k ) w p d c -55 to 175 t c =25 c thermal characteristics maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja 2.8 c/w thermal resistance, junction-to-case r jc t c =70 c a e as mj single pulse avalanche energy c t c =70 c w 256 36 105 54 g r p p r p p r
symbol min typ max units 1 i gss 100 na v gs(th) v 17 g fs s c iss 3370 pf c oss 230 pf c rss 196 pf q g 83 nc 79 119 31 t d(on) 53 ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =50v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =18a v ds =10v , i d =18a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =80v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions reverse transfer capacitance on characteristics 21.5 b f=1.0mhz b stu/d36l01a www.samhop.com.tw mar,05,2012 2 v sd nc q gs nc q gd 8.0 22 gate-drain charge gate-source charge diode forward voltage v ds =50v,i d =18a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =10a 0.79 1.3 v notes v ds =50v,i d =18a,v gs =10v a.pulse test:pulse width < 300us, duty cycle < 2%. b.guaranteed by design, not subject to production testing. c.starting t j =25 c,l=0.5mh,v dd = 50v.(see figure13) d.pulse test:pulse width < 1us, duty cycle < 1%. _ _ 2 2.8 4 35 bv dss 100 v drain-source breakdown voltage v gs =0v , i d =10ma d _ _ ver 1.0
stu/d36l01a www.samhop.com.tw mar,05,2012 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown voltage variation with temperature 100 80 60 40 0 0 1 2 3 4 5 30 24 18 12 6 0 0 1.2 7.2 6.0 4.8 3.6 2.4 tj=125 c -55 c 25 c 60 50 40 30 20 10 1 2.5 2.2 1.9 1.6 1.3 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =18a 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 20 v gs =10v v gs =5.5v v gs =6v v gs =7v v gs =10v 100 80 60 40 20 1 ver 1.0 v gs =5v v gs =4.5v
stu/d36l01a www.samhop.com.tw mar,05,2012 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 100 100 10 1 0.3 r d s ( o n ) limit 60 50 40 30 20 10 0 24 68 10 0 125 c 75 c 25 c i d =18a 20.0 10.0 1.0 0 0.2 0.4 0.6 0.8 1.0 5.0 25 c 125 c 75 c ciss coss crss 4500 3750 3000 2250 1500 750 0 10 15 20 25 30 0 5 v ds =50v,i d =1a v gs =10v 10 8 6 4 2 0 v ds =50v i d =18a dc 10 m s 1ms 10 0us 10us 0 35 28 21 14 7 56 49 42 v gs =10v single pulse t c =25c 500 100 10 1 100 10 1 tf td(off) ver 1.0 tr td(on)
t p v (br )dss i as figure 13b. stu/d36l01a www.samhop.com.tw mar,05,2012 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r j ja (t)=r (t) * r j ja 2. r j ja =s ee datasheet 3. t jm- t a =p dm *r j ja (t) 4. duty cycle, d=t 1 /t 2 single pulse unclamped inductive waveforms figure 13a. unclamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - dd 20v v ver 1.0
stu/d36l01a www.samhop.com.tw mar,05,2012 6 package outline dimensions to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 10.830 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 11.430 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.426 0.450 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035 ver 1.0
stu/d36l01a www.samhop.com.tw mar,05,2012 7 to-252 0.127 0.633 0.889 1.092 5.969 9.601 0.460 0.560 0.889 1.143 l4 0.508 2.286 bsc b1 b2 6.400 6.731 b l3 1.313 1.651 l1 a1 2.666 3.174 l2 5.515 5.415 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.184 2.388 max min 0.000 0.666 5.207 5.461 c 0.460 0.584 d 6.223 d1 e e 10.286 l h 1.016 1 0 7 8 ref. max min millimeters inches 0.086 0.094 0.000 0.005 0.025 0.035 0.026 0.043 0.205 0.215 0.018 0.023 0.235 0.245 0.213 0.217 0.252 0.265 0.090 bsc 0.378 0.405 0.052 0.065 0.105 0.125 0.018 0.022 0.035 0.045 0.020 0.040 0 7 8 ref. symbols e1 4.902 5.004 0.193 0.197 ver 1.0
stu/d36l01a www.samhop.com.tw mar,05,2012 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 -0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 -0 2.2 ? 13.0 +0.5 - 0.2 10.6 2.0 2 0.5 "a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h ver 1.0
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